to-220f 1.base 2.collector 3.emitter to-220f plastic-encapsulate transistors KSD1408 transistor (npn) features z low frequency amplifier z medium speed switching maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 80 v collector-emitter breakdown voltage v (br)ceo * i c =50ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =80v,i e =0 30 a emitter cut-off current i ebo v eb =5v,i c =0 100 a h fe(1) v ce =5v, i c =0.5a 40 240 dc current gain h fe(2) v ce =5v, i c =3a 15 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.3a 1.5 v base-emitter voltage v be v ce =5v, i c =3a 1.5 v transition frequency f t v ce =5v,i c =0.5a 8 mhz collector output capacitance c ob v cb =10v,i e =0, f=1mhz 90 pf *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) rank r o y range 40-80 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 4 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
